PART |
Description |
Maker |
M5M4V64S20ATP-12 M5M4V64S20ATP-8 |
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M5M4V64S40ATP-10L M5M4V64S40ATP-8 M5M4V64S40ATP-8A |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
IBM13N64734HCA |
64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块)
|
International Business Machines, Corp.
|
TM54S816T |
Organized as 4-blank x 2097152-word x 16-bit(8Mx16)
|
Avic Technology
|
UPD23C64300F9-XXX-BC3 UPD23C64300 UPD23C64300F9-BC |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位(字节模式 4分字6位(字模式) CAP 3.6PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
NEC, Corp. NEC Corp. NEC[NEC]
|
MSM56V16800D MSM56V16800DH |
2-Bank?1,048,576-Word?8-Bit Synchronous Dynamic RAM(2缁??,048,576瀛??浣??姝ュ???AM) 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2组,048,576字位同步动态RAM) 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD. OKI electronic componets
|
UPD23C64040JLGX-XXX UPD23C64080JLGY-XXX-MKH |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE 6400位掩膜可编程ROM00万字位(字节模式 4分字6位(字模式)页面访问模式
|
http:// NEC, Corp. NEC Corp.
|
K8S6415EBB |
(K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory
|
Samsung semiconductor
|
K5C6417YTM/K5C6417YBM |
64M Bit (4Mx16) Four Bank NOR Flash Memory Data Sheet
|
Samsung Electronic
|
K8S6415ETB-FC7C K8S6415ETB-DC7C K8S6415ETB K8S6415 |
64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
M5M5V208VP-10LL-W M5M5V208RV-12L-W M5M5V208RV-12LL |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|